I am making a circuit with IGBT for charging a capacitor. The Driver which i use is a high side driver as suggested by Infineon.I have received working spice model of the driver from Infineon for my application. however the simulation in LT spice is not giving required output and also it is very slow. i am attaching the simulation file. Kindly guide me in finding the error. Regards Sriniketh
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Edited by Moderator
sriniketh schrieb: > i am attaching the simulation file. Two things: 1. you have posted in the German forum. Post English questions in the embdev.net forum please. 2. for the users with tablets and phones: attach a screenshot of your schematic. Then they also can try to help you....
Attached files:
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highmos.jpg
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highigbt.jpg
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I am making a circuit with IGBT for charging a capacitor. The Driver which i use is a high side driver as suggested by Infineon.I have received working spice model of the driver from Infineon for my application. however the simulation in LT spice is not giving required output and also it is very slow.I have also tried the same concept with power MOSFETs. i am attaching the simulation file. Kindly guide me in finding the error. Regards Sriniketh
sriniketh wrote: > I will post in the other website I already shifted your thread to embdev.net (see the URL line of your browser).
VS of the IR2110 is wrongly connected. Note that it should connect to the load output between Hi- and Lowside, according to the datasheet. D4 is unnecessary as is R1 and R2.
Attached files:
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circuit.jpg
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Now i would like to drive the circuit with negative 800VDC . I have doubts regarding the reference ground for the control section and the power section.In the control section i can use the ground of 0V. and for the power section i have -800VDC. Do i need to modify my circuit for my negative power source . kindly guide
No, this will blow up the Lowside MOSFet immediately, as it will see 800V between Source and Gate. Possibly the only way to solve this is to reference the complete PA including the driver IC to the -800V and drive the circuit with optocouplers. The next problem ist to generate the 12V-15V for the driver and charging pump, with about -785V.
Matthias Sch. wrote: > No, this will blow up the Lowside MOSFet immediately, as it will > see > 800V between Source and Gate. Possibly the only way to solve this is to > reference the complete PA including the driver IC to the -800V and drive > the circuit with optocouplers. > The next problem ist to generate the 12V-15V for the driver and charging > pump, with about -785V. Thank you for the information. I have tried the bootstrap example for high side driving. Can i connect the load to the collector side and drive it as low side driver ?. Is it possible ?.Can you suggest sample circuit for solving such a condition Is just the bootstrap capacitor is not enough to drive the gate? Do i also need charge pump circuit ? Thanks in Advance Sriniketh
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